In2te3 ferroelectric
WebJan 1, 2005 · In the present paper, measurements of the electrical conductivity, the Hall coefficient and the dielectric constant in Ga 2 Te 3 was reported. Our main conclusions were: 1. Ga 2 Te 3 crystal is a promising n-type semiconductor. 2. The energy gap for that compound is 1.21 eV, while the activation energy of donors is 0.11 eV. 3. The In2Se3 films were transferred from mica to TEM grids or other substrates by the poly (methyl methacrylate) (PMMA) method. The PMMA solution was first spin coated onto mica at 3,000 rpm for 60 s and then heated at 100 °C for 5 min. Second, the PMMA was spin coated again to the mica at 1,000 rpm for 60 … See more In a typical CVD process, 6 mg In2O3 (99.99%, Alfa) and three fresh mica sheets were loaded into the quartz boat and placed in downstream zone 2 (T2 = 560–760 °C; heating … See more The InSe crystals were synthesized by heating In2Se3 powder (99.99%, Innochem) at 950 °C for 30 min under H2/N2 mixed gas (30 s.c.c.m.). Then, the InSe powder was obtained by grinding the InSe crystals. In the … See more The In2Se3 films were characterized by OM (Leica, DM2700M and DM1750M), atomic force microscopy (Hitachi 5300E), piezoresponse force microscopy (Asylum Research MFP-3D … See more The metastable β′-In2Se3 can be transformed into a more stable α phase by releasing the strain. We release the strain of β′-In2Se3 films by … See more
In2te3 ferroelectric
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WebApr 7, 2024 · The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In 2 Se 3 /graphene, exhibiting a tunable Schottky barrier ... WebOct 21, 2024 · Here, hexagonally stacking α-In 2 Se 3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) …
WebFeb 1, 2024 · When stacking a Bi 2 Se 3 layer on top of a α -In 2 Se 3 ferroelectric layer, two different arrangements can be obtained, noted hereafter G1 and G 2, depending on the direction of the polarization vector: in the G 1 configuration, the spontaneous out-of-plane electric polarization P is pointing towards Bi 2 Se 3 while in the configuration G 2 it … WebApr 6, 2024 · This concept is demonstrated using the example of the bilayer MnBi2Te4 on ferroelectric In2Se3 or In2Te3, where the polarization direction of the 2D ferroelectrics determines the interfacial band ...
WebOct 30, 2024 · Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α -In 2 Se 3 /WSe 2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small ... WebHere we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In 2 Se 3 nanoflakes. The noncentrosymmetric …
WebJan 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be...
WebAbstract. van der Waals layered α-In 2 Se 3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an … the park at zoarWebJul 13, 2024 · Here, we show in-plane ferroelectricity in β′ phase In 2 Se 3, a different In 2 Se 3 polymorph. Previously, the β′ phase was believed to be metastable and only existed … the park at winter parkWebThe stable ferroelectricity of 2D α In 2 Se 3 is attributed to its unique re-bonding mechanism and the locking between polarizations in the OOP and IP directions, rather than the long-range Coulomb interactions in conventional displacement-type ferroelectrics. shuttle reishistorieWebJul 6, 2024 · Indium selenide (α-In 2 Se 3) is a III 2 –VI 3 binary chalcogenide material with a bandgap in the range of 1.39–1.45 eV [].The excellent electrical and optical properties of α-In 2 Se 3 render it a good candidate for photodetection applications [2,3,4,5].Moreover, α-In 2 Se 3 samples, including atom-thick α-In 2 Se 3 layers, exhibit ferroelectric properties at … the park augusta gaWebMar 7, 2024 · Through systematical first-principles calculations, we study the magnetic properties of the van der Waals heterostructure of two-dimensional FM metal CrTe2 and … the park austin domainWebNov 9, 2024 · The anti-ferroelectric order in β′-In 2 Se 3 and ferroelectric order of β*-In 2 Se 3 are identified, respectively, down to the 2D limit by comprehensive investigations of structural and spectroscopic signatures, including the lattice distortion, the spatial profile of images, the formation of domain structure, and the electronic band ... shuttle relay techniqueWebBy alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.", author = "Gangjian Tan and Zeier, {Wolfgang G.} and Fengyuan Shi and Pengli Wang and Snyder, {G. Jeffery} and Dravid, {Vinayak P.} and Kanatzidis ... shuttle remote